Effects of Antimony Deposition on Field-Emission Current Density of Ge/Si

To estimate the field-emission current density of a germanium/silicon heterosystem, 20-nm Ge/Si(100) were grown by molecular beam epitaxy. The surface one sample was covered with layer antimony, which removed in vacuum prior to samples being measured. A second Ge/Si exposed room air absence antimony. current-voltage characteristics both obtained scanning tunneling microscopy discovered be agreement classical Fowler-Nordheim theory. emission from Ge nanocrystal exceeds wetting Ge/Si. pure is less than adsorption layers.